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SMD Type NPN General Purpose Transistors BCX19 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features High current (max. 500 mA). Low voltage (max. 45 V). +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating 50 45 5 500 1 200 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Symbol ICBO ICBO IEBO Testconditons IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 IC = 0; VEB = 5 V IC = 100mA; VCE = 1 V DC current gain * hFE IC = 300 mA;VCE = 1 V IC = 500 mA;VCE = 1 V Collector-emitter saturation voltage Base to emitter voltage * Collector capacitance Transition frequency * Pulse test: tp 300 is; d 0.02. VCE(sat) VBE CC fT IC = 500 mA; IB = 50 mA IC = 500 mA; VCE = 1 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz 100 5 100 70 40 620 1.2 mV V pF MHz Min Typ Max 100 5 100 600 Unit nA iA nA Marking Marking U1 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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